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MOS (Metal Oxide Semiconductor) Physics and Technology H 928 p. 82

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価格 \77,723（税込）

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発行年月	1982年04月
出版社／提供元	John Wiley & Sons, Inc.
出版国	アメリカ合衆国
言語	英語
媒体	冊子
装丁	hardcover
ページ数／巻数	928 p.
ジャンル	洋書
ISBN	9780471085003
商品コード	0208419089
商品URL	https://kw.maruzen.co.jp/ims/itemDetail.html?itmCd=0208419089

内容

This reference explores MOS (Metal Oxide Semiconductors) which are theceramic semiconductors that are responsible for today's electronicrevolution. These materials' ability to hold an electric charge allowed thetransistor to replace the vacuum tube and paved the way for theminiaturization of electronic goods.

Field Effect. The Metal Oxide Silicon Capacitor at Low Frequencies. The Metal Oxide Silicon Capicitor at Intermediate and High Frequencies. Extraction of Interface Trap Properties from the Conductance. Interfacial Nonuniformities. Experimental Evidence for Interface Trap Properties. Extraction of Interface Trap Properties from the Capacitance. Measurement of Silicon Properties. Charges, Barrier Heights, and Flatband Voltage. Charge Trapping in the Oxide. Instrumentation for Measuring Capacitor Characteristics. The Oxidation of Silicon Oxidation Kinetics. The Oxidation of Silicon Technology. Control of Oxide Charges. Models of the Interface. Appendices. Index.

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