内容

目次

Preface. Color Tables. 1 General Properties of Nitrides. Introduction. 1.1 Crystal Structure of Nitrides. 1.2 Gallium Nitride. 1.3 Aluminum Nitride. 1.4 Indium Nitride. 1.5 Ternary and Quaternary Alloys. References. 2 Electronic Band Structure and Polarization Effects. Introduction. 2.1 Band Structure Calculations. 2.2 General Strain Considerations. 2.3 Effect of Strain on the Band Structure of GaN. 2.4 kp Theory and the Quasi–Cubic Model. 2.5 Quasi–Cubic Approximation. 2.6 Temperature Dependence of Wurtzite GaN Bandgap. 2.7 Sphalerite (Zinc blende) GaN. 2.8 AlN. 2.9 InN. 2.10 Band Parameters for Dilute Nitrides. 2.11 Confined States. 2.12 Polarization Effects. References. 3 Growth and Growth Methods for Nitride Semiconductors. Introduction. 3.1 Substrates for Nitride Epitaxy. 3.2 A Primer on Conventional Substrates and their Preparation for Growth. 3.3 GaN Epitaxial Relationship to Substrates. 3.4 Nitride Growth Techniques. 3.5 The Art and Technology of Growth of Nitrides. 3.6 Concluding Remarks. References. 4 Extended and Point Defects, Doping, and Magnetism. Introduction. 4.1 A Primer on Extended Defects. 4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution Growth (HNPSG) and HVPE–Grown GaN. 4.3 Point Defects and Autodoping. 4.4 Defect Analysis by Deep–Level Transient Spectroscopy. 4.5 Minority Carrier Lifetime. 4.6 Positron Annihilation. 4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance, and Optical Detection of Magnetic Resonance. 4.8 Role of Hydrogen. 4.9 Intentional Doping. 4.10 Ion Implantation and Diffusion for Doping. 4.11 Summary. References. Index. Appendix.