内容

目次

Physical constants and unit conversions; List of symbols; Preface to thesecond edition; Preface to the first edition; 1. Introduction; 2. Basicdevice physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performancefactors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performancefactors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1.CMOS process flow; 2. Outline of a process for fabricating modern n-p-nbipolar transistors; 3. Einstein relations; 4. Spatial variation ofquasi-Fermi potentials; 5. Generation and recombination processes andspace-charge-region current; 6. Diffusion capacitance of a p-n diode; 7.Image-force-induced barrier lowering; 8. Electron-initiated andhole-initiated avalanche breakdown; 9. An analytical solution for theshort-channel effect in subthreshold; 10. Generalized MOSFET scale lengthmodel; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanicalsolution in weak inversion; 13. Power gain of a two-port network; 14.Unity-gain frequencies of a MOSFET transistor; 15. Determination of emitterand base series resistances; 16. Intrinsic-base resistance; 17. Energy-banddiagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor;References; Index.