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目次

Introduction. Part I Semiconductor Physics. Chapter 1 Physics andProperties of Semiconductors-A Review. 1.1 Introduction. 1.2 CrystalStructure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentrationat Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon,Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures.1.8 Basic Equations and Examples. Part II Device Building Blocks.Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 TransientBehavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions.Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formationof Barrier. 3.3 Current Transport Processes. 3.4 Measurement of BarrierHeight. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 IdealMIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors.Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 StaticCharacteristics. 5.3 Microwave Characteristics. 5.4 Related DeviceStructures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs.6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 NonuniformDoping and Buried-Channel Device. 6.4 Device Scaling and Short-ChannelEffects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET.7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 RelatedTunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes.9.1 Introduction. 9.2 Static Characteristics. 9.3 DynamicCharacteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode.Chapter 10 Transferred-Electron and Real-Space-Transfer Devices. 10.1Introduction. 10.2 Transferred-Electron Device. 10.3Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices.11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 ThyristorVariations. 11.4 Other Power Devices. Part V Photonic Devices andSensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 LaserPhysics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers.Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well InfraredPhotodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List ofSymbols. B. International System of Units. C. Unit Prefixes. D.Greek Alphabet. E. Physical Constants. F. Properties of ImportantSemiconductors. G. Properties of Si and GaAs. H. Properties of SiO, andSi3N. Index.